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Rumah > Produk > Produk Semikonduktor Diskrit > Transistor - Bipolar (BJT) - Tunggal > MJE802G
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Indonesia
Indonesia
3751740Gambar MJE802G.AMI Semiconductor / ON Semiconductor

MJE802G

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Reference Price (dalam dolar AS)

Persediaan
1+
$0.62
10+
$0.534
100+
$0.399
500+
$0.313
1000+
$0.242
Pertanyaan online
Spesifikasi
  • Nomor bagian
    MJE802G
  • Pabrikan / Merek
  • Kuantitas stok
    Persediaan
  • Deskripsi
    TRANS NPN DARL 80V 4A TO225AA
  • Memimpin Status Bebas / Status RoHS
    Memimpin bebas / RoHS Compliant
  • Lembar data
  • Tegangan - Kolektor Emitter Breakdown (Max)
    80V
  • VCE Saturation (Max) @ Ib, Ic
    2.5V @ 30mA, 1.5A
  • transistor Jenis
    NPN - Darlington
  • Paket Perangkat pemasok
    TO-225AA
  • Seri
    -
  • Listrik - Max
    40W
  • Pengemasan
    Bulk
  • Paket / Case
    TO-225AA, TO-126-3
  • Nama lain
    MJE802GOS
  • Suhu Operasional
    -55°C ~ 150°C (TJ)
  • mount Jenis
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Status Gratis Memimpin / Status RoHS
    Lead free / RoHS Compliant
  • Frekuensi - Transisi
    -
  • Detil Deskripsi
    Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
  • DC Current Gain (hFE) (Min) @ Ic, VCE
    750 @ 1.5A, 3V
  • Saat ini - Kolektor cutoff (Max)
    100µA
  • Saat ini - Kolektor (Ic) (Max)
    4A
  • Nomor Bagian Dasar
    MJE802
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Persediaan
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Deskripsi: TRANS NPN DARL 80V 4A TO126

Produsen: AMI Semiconductor / ON Semiconductor
Persediaan

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